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| Schottky Barrier Diodes (SBD) MA2J729 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification K A 0.625 0.16 - 0.06 + 0.1 * Sealed in the S-mini (2-pin) mold and super small type * Allowing to rectify under (IF(AV) = 200 mA) condition * Allowing high-density mounting 2 1 1.25 0.1 0.5 0.1 I Features 0.3 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 30 30 300 200 1 150 -55 to +150 Unit V V mA mA A C C 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2B Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 50 0.55 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.7 0.1 1 MA2J729 IF V F 103 100C 25C 0.5 Schottky Barrier Diodes (SBD) VF Ta 105 IR VR Forward current IF (mA) Forward voltage VF (V) Reverse current IR (A) 102 T = 150C a - 20C 0.4 IF = 200 mA 104 Ta = 150C 10 0.3 100 mA 0.2 103 100C 102 1 10-1 0.1 10 10 mA 25C 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 1 0 40 80 120 160 200 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 40 35 f = 1 MHz Ta = 25C IR T a 105 Terminal capacitance Ct (pF) 104 Reverse current IR (A) 30 25 20 15 10 5 0 15 V 5V 103 VR = 30 V 102 10 0 5 10 15 20 25 30 1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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